Sensitivity analysis of the back interface trap-induced R-G current obtained by a lateral SOI forward gated-diode

The sensitivity analysis of the back interface trap-induced recombination-generation (R-G) current of the lateral SOI forward gated-diode was given. The dependence of the R-G current sensitivity on the back interface traps was examined in the normalized form and the effects of some key factors such as the silicon film thickness and channel doping concentration were demonstrated. The results show the R-G current is heavily dependent on the interface trap density. The effects of the channel doping concentration and the silicon film thinckness of the SOI devices on the R-G current magnitude must be considered in order to accurately model the interface traps via the R-G current peak.EI0101292-12972