Add to ORKGThe shift of transition between partially and fully-depleted behavior in SOI MOSFET due to radiation was reported for the first time. Based on the derived fully continuous compact SOI MOSFET model including the total dose effects, the shift of transition between partially and fully-depleted behavior due to radiation was simulated. The total dose ionizing effects of the partially and fully-depleted SOI MOSFET were discussed.EI03358-3612
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid sta...
Application of power MOSFETs in spaceborne power converters was simulated by exposing devices to low...
Many high performance amplifiers use power MOSFETs in their output stages, especially in operational...
A new approach to model the radiation-induced threshold voltage shift in fully-depleted SOI MOSFET i...
A new approach was proposed to model the total dose effects on silicon-on-insulator (SOI) devices fo...
This paper presents a compact model for partially depleted SOI MOSFETs, which allows for describing ...
Previous work showed the possible existence of a total-dose latch effect in fully-depleted SOI trans...
Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI)...
The response of Gate-All-Around MOS transistors to dose irradiation is quite different from that obs...
A radiation effect on edgeless FD accumulation mode (AM) p-channel and inversion mode (IM) n-channel...
Fully Depleted MOS Silicon-on-Insulator transistors fabricated with a custom process from the Univer...
We present the first experimental data about the response of partially (PD) and fully (FD) depleted ...
A radiation effect on edgeless FD accumulation mode (AM) p-channel and inversion mode (IM) n-channel...
The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL an...
This paper investigates and compares experimentally the total ionizing dose (TID) effects in digital...
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid sta...
Application of power MOSFETs in spaceborne power converters was simulated by exposing devices to low...
Many high performance amplifiers use power MOSFETs in their output stages, especially in operational...
A new approach to model the radiation-induced threshold voltage shift in fully-depleted SOI MOSFET i...
A new approach was proposed to model the total dose effects on silicon-on-insulator (SOI) devices fo...
This paper presents a compact model for partially depleted SOI MOSFETs, which allows for describing ...
Previous work showed the possible existence of a total-dose latch effect in fully-depleted SOI trans...
Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI)...
The response of Gate-All-Around MOS transistors to dose irradiation is quite different from that obs...
A radiation effect on edgeless FD accumulation mode (AM) p-channel and inversion mode (IM) n-channel...
Fully Depleted MOS Silicon-on-Insulator transistors fabricated with a custom process from the Univer...
We present the first experimental data about the response of partially (PD) and fully (FD) depleted ...
A radiation effect on edgeless FD accumulation mode (AM) p-channel and inversion mode (IM) n-channel...
The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL an...
This paper investigates and compares experimentally the total ionizing dose (TID) effects in digital...
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid sta...
Application of power MOSFETs in spaceborne power converters was simulated by exposing devices to low...
Many high performance amplifiers use power MOSFETs in their output stages, especially in operational...