Oxide thickness effects on n-MOSFETs under on-state hot-carrier stress

Hot-carrier induced (CHI) degradation of surface channel n-MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition. Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness. Furthermore, a linear relationship is found between m and n. Based on this result, the lifetime prediction model can be expended to the device with thinner oxides.EI03290-2952