EFFECTS OF HYDROGEN ON DEFECTS IN NEUTRON IRRADIATED SILICON.

Effects of hydrogen on electrical properties and annealing behavior of radiation defects in N- and P-type S//i(H) irradiated by neutron have been studied by DLTS, IR absorption, resistivity and minority carrier lifetime measurements. In as-grown and neutron irradiated S//i(H), some S//i-H IR bands and hydrogen-related deep centers have been observed. Because of hydrogen in silicon, the production rates of radiation defects decreased, and the passivation action of hydrogen emerged unambiguously at 200 degree c annealing temperature or higher. These cause the differences of annealing behavior of the resistivity and lifetime between S//i(H) and S//i(A//r).EI