New method of accurate electrical characterization of semiconductor diodes at forward bias

A new method to analyze the forward electrical characteristics of semiconductor diodes by using series mode is developed. This method can not only accurately measure the values of series resistance, junction capacitance, junction voltage, and ideality factor at various forward biases, but also detect and measure an interfacial layer in a real diode. Various n-GaN Schottky diodes are measured by this method, and all the experiment results are consistent with the theoretical analyses. Negative capacitance (NC) of the junction and the interfacial layer with nonlinear resistance and capacitance are confirmed in GaN Schottky diodes.EI0121307-13112