Distortion behavior for SOI MOSFET

Distortion analysis of SOI MOS transistor was presented. By the power series method, the distortion behaviors of FD (fully depleted) and RC (recessed channel) SOI MOS transistor configurations were investigated. It was shown that the distortion figures deteriorate with the scaling down of channel length, and the RC SOI device has better distortion performance than the FD SOI device. The experimental data show that the ineffective body contact can lead to an increase of the harmonic amplitude due to the bulk resistance. The results give an intuitive knowledge for the design of low distortion mixed-signal integrated system.EI08809-8122