Add to ORKGA method for analyzing the isothermal capacitance transience is suggested, which is referred to as the isothermal capacitance transience-time spectroscopy (ICTTS). The method can be used to observe highly deep levels in semiconductors with wide band gaps near the room temperature. The deep levels of solid C70/p-GaAs heterojunctions are investigated by this method. It is found that there are two hole traps, H1 and H2 with level of EV+0.856 eV and EN+1.037 eV in solid C70, respectively.EI0103498-35035
The electrical properties of the heterojunction of solid C60/n-type GaAs were studied. The results o...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
We will shortly review the basic physics of charge-carrier trapping and emission from trapping state...
发展了恒温电容瞬态数据处理方法 ,称新方法为恒温电容瞬态时间积谱 (ICTTS) .用ICTTS方法测量分析了C70固体 p GaAs异质结的深能级 ,结果发现在C70 固体中存在两个很深的空穴陷阱 ...
Solid C70/GaAs contacts were fabricated by vacuum deposition of solid C70 films on the n-type and p-...
A well-known technique—Deep level Transient Spectroscopy (DLTS)—was used for investigating deep leve...
A well-established characterization method for investigating deep traps in semi-insulating (SI) GaAs...
We reported Isothermal Capacitance Transient Spectroscopy (ICTS), with which deep level signals can ...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The study of deep level traps...
Two traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insu...
Deep levels have been studied for many GaAs, Ga1-xAlxAs thin film structures (Schottky diodes, p+ n ...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
Work is reported on three topics relating to problems which hold back the development of GaAs integr...
A deep level transient conductance spectrometer for high resistivity semiconductors, using a radiofr...
For defects or impurities with deep energy levels, such as the commonly observed EL2, EL3, and EL6 i...
The electrical properties of the heterojunction of solid C60/n-type GaAs were studied. The results o...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
We will shortly review the basic physics of charge-carrier trapping and emission from trapping state...
发展了恒温电容瞬态数据处理方法 ,称新方法为恒温电容瞬态时间积谱 (ICTTS) .用ICTTS方法测量分析了C70固体 p GaAs异质结的深能级 ,结果发现在C70 固体中存在两个很深的空穴陷阱 ...
Solid C70/GaAs contacts were fabricated by vacuum deposition of solid C70 films on the n-type and p-...
A well-known technique—Deep level Transient Spectroscopy (DLTS)—was used for investigating deep leve...
A well-established characterization method for investigating deep traps in semi-insulating (SI) GaAs...
We reported Isothermal Capacitance Transient Spectroscopy (ICTS), with which deep level signals can ...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The study of deep level traps...
Two traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insu...
Deep levels have been studied for many GaAs, Ga1-xAlxAs thin film structures (Schottky diodes, p+ n ...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
Work is reported on three topics relating to problems which hold back the development of GaAs integr...
A deep level transient conductance spectrometer for high resistivity semiconductors, using a radiofr...
For defects or impurities with deep energy levels, such as the commonly observed EL2, EL3, and EL6 i...
The electrical properties of the heterojunction of solid C60/n-type GaAs were studied. The results o...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
We will shortly review the basic physics of charge-carrier trapping and emission from trapping state...