Stress-dependent hot carrier degradation for pMOSFETs structure under stress mode Vg=Vd/2

Hot carrier stress degradation for short channel pMOSFETs with ultra-thin gate oxides (2.5 nm) and HALO structure is investigated under stress mode Vg=Vd/2. At high stress voltages, the device degradation is mainly caused by holes to break up Si-H bonds directly or the recombination of electrons and holes. With the decrease of stress voltage, the device degradation is caused by electron injection. At last, the critical voltage for different degradation mechanism is proposed and verified in experiments.EI04436-4402