Add to ORKGA newly developed method of pattern shift with spacer is proposed to define sub-0.1 ??m MOS transistor gates. Polysilicon doped heavily is introduced as solid-phase diffusion source to realize ultra-shallow source and drain extensions. Using the process of integration of these two methods, which is basically compatible with standard process, the nanoscale devices and circuits with gate length of 84.6 nm are fabricated with relatively good performance.EI05583-5882
A new MOS device design applied to the nano-scale is proposed. In this design, while the channel reg...
The editors (of North Carolina State U., Qualcomm MEMS Technologies, and Mattson Technology Inc. in ...
The scaling of CMOS devices into the nanometer regime has required the introduction of new materials...
An advanced process for fabrication of 0.25 μm CMOS transistors has been demonstrated. This process ...
An advanced CMOS structure, in which a raised source/drain and contact windows formed over the field...
Throughout the progressive miniaturization in microelectronics the processing of integrated-circuit ...
The scaling of CMOS technology has progressed rapidly for three decades, contributing to the superio...
The current trend in scaling transistor gate length below 60 nm is posing great challenges both rela...
This paper presents an advanced shallow junction formation method which is applicable to fabricate s...
The 2001 update of the International Technology Roadmap for Semiconductors predicts a printed minimu...
Abstract — The trend of decreasing the minimal structure sizes in microelectronics is still being co...
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length i...
This paper addresses the optimization of ion implantation and rapid thermal annealing for the fabric...
Historically, the steady miniaturization of the conventional (planar bulk) MOSFET by simply scaling ...
Vohrmann M, Geisler P, Jungeblut T, Ruckert U. Design-space exploration of ultra-low power CMOS logi...
A new MOS device design applied to the nano-scale is proposed. In this design, while the channel reg...
The editors (of North Carolina State U., Qualcomm MEMS Technologies, and Mattson Technology Inc. in ...
The scaling of CMOS devices into the nanometer regime has required the introduction of new materials...
An advanced process for fabrication of 0.25 μm CMOS transistors has been demonstrated. This process ...
An advanced CMOS structure, in which a raised source/drain and contact windows formed over the field...
Throughout the progressive miniaturization in microelectronics the processing of integrated-circuit ...
The scaling of CMOS technology has progressed rapidly for three decades, contributing to the superio...
The current trend in scaling transistor gate length below 60 nm is posing great challenges both rela...
This paper presents an advanced shallow junction formation method which is applicable to fabricate s...
The 2001 update of the International Technology Roadmap for Semiconductors predicts a printed minimu...
Abstract — The trend of decreasing the minimal structure sizes in microelectronics is still being co...
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length i...
This paper addresses the optimization of ion implantation and rapid thermal annealing for the fabric...
Historically, the steady miniaturization of the conventional (planar bulk) MOSFET by simply scaling ...
Vohrmann M, Geisler P, Jungeblut T, Ruckert U. Design-space exploration of ultra-low power CMOS logi...
A new MOS device design applied to the nano-scale is proposed. In this design, while the channel reg...
The editors (of North Carolina State U., Qualcomm MEMS Technologies, and Mattson Technology Inc. in ...
The scaling of CMOS devices into the nanometer regime has required the introduction of new materials...