Add to ORKGUltra-thin high-k HfO2 gate dielectrics films are fabricated by reacting magnetron sputtering and furnace annealing. Breakdown characteristics (soft breakdown and hard breakdown) of gate dielectrics are studied. Results show that breakdown characteristic of thin gate dielectrics is different from that of thick gate dielectrics. Thus, breakdown mechanism of gate dielectrics under constant current stress is studied.EI081009-10122
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by...
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress...
HfO2 high K gate dielectric films were fabricated on p-Si(100) substrates by ion beam sputtering at ...
Ultra-thin HfO2 gate dielectrics films were fabricated by ion beam sputtering a sintered HfO2 target...
Ultra-thin HfO2 gate dielectric films fabricated by ion beam sputtering a sintered HfO2 target. Capa...
High-K gate dielectric will be needed when MOS devices are scaled down to the sub-100 nm level. HfO2...
The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By moni...
The electrical properties of the HfO2 gate dielectrics prepared under different annealing conditions...
The deposition and characterization of HfO2 films for potential application as a high-k gate dielect...
The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal...
[[abstract]]The reliability characteristics of high-k gate stacks of HfO2 films using atomic layer d...
The reliability characteristics of the ultra-thin (EOTsim;0.9nm) HfO 2 gated nMOS capacitor with HfN...
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress...
[[abstract]]The growth, composition, electrical characteristics, and reliability performance of high...
Abstract: Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputter...
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by...
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress...
HfO2 high K gate dielectric films were fabricated on p-Si(100) substrates by ion beam sputtering at ...
Ultra-thin HfO2 gate dielectrics films were fabricated by ion beam sputtering a sintered HfO2 target...
Ultra-thin HfO2 gate dielectric films fabricated by ion beam sputtering a sintered HfO2 target. Capa...
High-K gate dielectric will be needed when MOS devices are scaled down to the sub-100 nm level. HfO2...
The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By moni...
The electrical properties of the HfO2 gate dielectrics prepared under different annealing conditions...
The deposition and characterization of HfO2 films for potential application as a high-k gate dielect...
The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal...
[[abstract]]The reliability characteristics of high-k gate stacks of HfO2 films using atomic layer d...
The reliability characteristics of the ultra-thin (EOTsim;0.9nm) HfO 2 gated nMOS capacitor with HfN...
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress...
[[abstract]]The growth, composition, electrical characteristics, and reliability performance of high...
Abstract: Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputter...
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by...
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress...
HfO2 high K gate dielectric films were fabricated on p-Si(100) substrates by ion beam sputtering at ...