Degradation of pMOSFETs with ultrathin oxide and different HALO dose

The effect of HALO dose on device parameter degradation of pMOSFET with 2.1 nm oxide and 0.135 ??m channel length at hot carrier stress is analyzed. It is found that the degradation mechanism is not sensitive to HALO dose changing, but the degradation quantities of linear drain current, saturation drain current, and maximum transconductance increase with HALO dose enhancing and are larger than those of speculated before. The degradation of device parameters (linear drain current, saturation drain current, and maximum transconductance) is attributed to not only the drain series resistance enhancing induced by interface states under spacer oxide and carrier mobility degradation but also the threshold voltage variation and initial threshold voltage increasing with HALO dose enhancing.EI091097-11032