Add to ORKGA novel application of SOI gate-bulk connected (GBC) LDMOSFET for RF power amplifier in short and medium range wireless communication is proposed. This application allows the power transistor to give higher intrinsic gain, lower power consumption. boost driving current capability and increase breakdown voltage. The results show that the good performance of this novel application can be used in the design of RF transmitter.Computer Science, Hardware & ArchitectureEngineering, ManufacturingEngineering, Electrical & ElectronicCPCI-S(ISTP)
[[abstract]]This paper presents, for the first time, the study of the application of a lateral diffu...
The development of computer aided design tools for devices and circuits has increased the interest f...
P OWER electronics appear in nearly every piece of modern electronic hardware, forming anessential c...
A novel application of SOI Gate-bulk connected (GBG) LDMOSFET for RF power amplifier in short and me...
This paper describes a SOI LDMOS/CMOS/BJT technology which can be used in portable wireless communic...
This paper describes a SOI LDMOS/CMOS/BJT technology that can be used in portable wireless communica...
This paper presents a silicon-on-insulator (SOI) lateral double-diffused MOS transistors (LDMOS) tec...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
This paper describes a bulk silicon LDMOS technology, which is compatible with CMOS, lateral BJT, an...
Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis o...
This letter describes a bulk silicon LDMOS technology, which is compatible with CMOS and passive com...
In mobile communication new applications like wireless internet and mobile video have increased the ...
The progress in wideband cellular systems was followed by the development of the necessary transisto...
Le marché des amplificateurs de puissance pour les combinés téléphoniques portables est actuellement...
The description of 900MHz silicon on insulator (SOI) fully integrated radio frequency (RF) power amp...
[[abstract]]This paper presents, for the first time, the study of the application of a lateral diffu...
The development of computer aided design tools for devices and circuits has increased the interest f...
P OWER electronics appear in nearly every piece of modern electronic hardware, forming anessential c...
A novel application of SOI Gate-bulk connected (GBG) LDMOSFET for RF power amplifier in short and me...
This paper describes a SOI LDMOS/CMOS/BJT technology which can be used in portable wireless communic...
This paper describes a SOI LDMOS/CMOS/BJT technology that can be used in portable wireless communica...
This paper presents a silicon-on-insulator (SOI) lateral double-diffused MOS transistors (LDMOS) tec...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
This paper describes a bulk silicon LDMOS technology, which is compatible with CMOS, lateral BJT, an...
Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis o...
This letter describes a bulk silicon LDMOS technology, which is compatible with CMOS and passive com...
In mobile communication new applications like wireless internet and mobile video have increased the ...
The progress in wideband cellular systems was followed by the development of the necessary transisto...
Le marché des amplificateurs de puissance pour les combinés téléphoniques portables est actuellement...
The description of 900MHz silicon on insulator (SOI) fully integrated radio frequency (RF) power amp...
[[abstract]]This paper presents, for the first time, the study of the application of a lateral diffu...
The development of computer aided design tools for devices and circuits has increased the interest f...
P OWER electronics appear in nearly every piece of modern electronic hardware, forming anessential c...