An intensity testing model and examination of gold-silicon wafer bonding

A bonding intensity testing method, called Press-arm model, has been successfully designed and verified by Ansys finite element analysis. The gold-silicon bonding strength [sigma(2)] = 238 MPa has been measured by the Press-arm model. We can probably determine the [sigma(2)] value and compare the bonding strengths by the Press-arm length l. The model can also be used in other type of bonding. The bond region is sufficiently stronger than the silicon substrate. A substrate-Si/Cr/Au/poly-Si/Au and a silicon substrate is bonded at 380-450 degrees C. It occurs as soon as the dissolving of the SiO2 layer by silicidation of the Cr barrier layer. To avoid gold contamination to the silicon die, an excess annealing temperature (about 20 degrees C higher than Au-Si eutectic horizontal) is used. The bonding surface with brick pattern is in favor of Au-Si bonding.Nanoscience & NanotechnologyEICPCI-S(ISTP)