Add to ORKGIn this paper an analytic model for Ge/Si core/shell nanowire MOSFETs (NWFETs) is developed. First, the electrostatic potential and charge model are derived out from classical device physics. Then the drift-diffusion drain current model is obtained and verified by comparisons with the numerical simulation. The ballistic current model is obtained with the approximately described quantum-mechanical effect through modifying the intrinsic carrier concentration under 2-dimensional confinement. With the proposed model, the performances of Ge/Si core/shell NWFETs are analyzed and significant characteristics are demonstrated in details. The analytic model in this paper provides a framework for further developing compact models of the NWFETs with Ge...
The performances of ultrascaled SiGe nanowire field- effect transistors (NWFETs) are investigated usi...
In this work, the SiG e nanowire p MOSFETs(NWT) for 7nm and beyond with Ge component varies from 20%...
Incorporating the source-to-drain tunneling current that is valid in all operating regions, an analy...
In this paper an analytic model for Ge/Si core/shell nanowire MOSFETs (NWFETs) is developed. First, ...
n analytic model for the nanowire MOSFETs (NWFETs) with Ge/Si core/shell structure is developed in t...
This paper investigates the transport properties of the core-shell based silicon/Germanium nanowire ...
This paper investigates the transport properties of the silicon-Germanium nanowire MOSFETs with core...
We ana/lyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semi...
This paper investigates the transport properties of the silicon-Germanium nanowire MOSFETs with core...
International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, SEP 09...
This paper presents the calibration of the novel kinetic velocity model (KVM) in the drift-diffusion...
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed...
The performances of ultrascaled SiGe nanowire field- effect transistors (NWFETs) are investigated us...
The performances of ultrascaled SiGe nanowire field- effect transistors (NWFETs) are investigated us...
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed...
The performances of ultrascaled SiGe nanowire field- effect transistors (NWFETs) are investigated usi...
In this work, the SiG e nanowire p MOSFETs(NWT) for 7nm and beyond with Ge component varies from 20%...
Incorporating the source-to-drain tunneling current that is valid in all operating regions, an analy...
In this paper an analytic model for Ge/Si core/shell nanowire MOSFETs (NWFETs) is developed. First, ...
n analytic model for the nanowire MOSFETs (NWFETs) with Ge/Si core/shell structure is developed in t...
This paper investigates the transport properties of the core-shell based silicon/Germanium nanowire ...
This paper investigates the transport properties of the silicon-Germanium nanowire MOSFETs with core...
We ana/lyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semi...
This paper investigates the transport properties of the silicon-Germanium nanowire MOSFETs with core...
International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, SEP 09...
This paper presents the calibration of the novel kinetic velocity model (KVM) in the drift-diffusion...
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed...
The performances of ultrascaled SiGe nanowire field- effect transistors (NWFETs) are investigated us...
The performances of ultrascaled SiGe nanowire field- effect transistors (NWFETs) are investigated us...
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed...
The performances of ultrascaled SiGe nanowire field- effect transistors (NWFETs) are investigated usi...
In this work, the SiG e nanowire p MOSFETs(NWT) for 7nm and beyond with Ge component varies from 20%...
Incorporating the source-to-drain tunneling current that is valid in all operating regions, an analy...