Three potential contributing factors to the TSV leakage and breakdown are discussed and analyzed in this study. In addition, an in-line testing methodology is put forward so that leakage and breakdown data could be easily obtained. Finite element method simulation was used to illustrate the testing principle, and experimental test were carried out for validation. It was found that the most contributing factor to the TSV leakage and breakdown is the uniformity of the insulator layer thickness, while via-diameter and pitch between TSVs are factors of failure mechanism of the low-frequency characteristics.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000349907100105&DestLinkType...
The TSV(Through-Silicon Via) plays an important role of inter-layer interconnection in 3D ICs. Howev...
Electrical failure due to surface discharge on the insulation material will cause material degradati...
Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3...
In the first three quarters of 2013, semiconductor industry witnessed a great multiplication of 12-i...
This paper presented a method to examine the electrical characteristics of sidewall insulation layer...
An in-line testing procedure of blind TSVs is put forward in this study. Insulation integrity is cho...
International audienceIn this paper, reliability of Through Silicon via (TSV) interconnects is analy...
As part of a study on HV design concepts for microwave tubes, a number of different insulator design...
Leakage current is one of the critical aspects to consider for overhead transmission line insulator’...
Abstract:- During operation, high voltage insulators may severe a certain degree of pollution which ...
In our previous work, some key parameters related to the variation of the leakage current from the h...
In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabric...
Abstract:- Leakage current measurements can be used in order to investigate the performance of outdo...
Since a TSV has a metal-insulator-semiconductor structure, it supports three fundamental modes namel...
Polyurethanes are frequently employed as an insulation material in electrical networks based on thei...
The TSV(Through-Silicon Via) plays an important role of inter-layer interconnection in 3D ICs. Howev...
Electrical failure due to surface discharge on the insulation material will cause material degradati...
Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3...
In the first three quarters of 2013, semiconductor industry witnessed a great multiplication of 12-i...
This paper presented a method to examine the electrical characteristics of sidewall insulation layer...
An in-line testing procedure of blind TSVs is put forward in this study. Insulation integrity is cho...
International audienceIn this paper, reliability of Through Silicon via (TSV) interconnects is analy...
As part of a study on HV design concepts for microwave tubes, a number of different insulator design...
Leakage current is one of the critical aspects to consider for overhead transmission line insulator’...
Abstract:- During operation, high voltage insulators may severe a certain degree of pollution which ...
In our previous work, some key parameters related to the variation of the leakage current from the h...
In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabric...
Abstract:- Leakage current measurements can be used in order to investigate the performance of outdo...
Since a TSV has a metal-insulator-semiconductor structure, it supports three fundamental modes namel...
Polyurethanes are frequently employed as an insulation material in electrical networks based on thei...
The TSV(Through-Silicon Via) plays an important role of inter-layer interconnection in 3D ICs. Howev...
Electrical failure due to surface discharge on the insulation material will cause material degradati...
Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3...