Self-aligned quadruple patterning (SAQP) process is a proven technique for deep nano-scale IC manufacturing, while its mask design and layout decomposition strategy is less intuitive. In this paper, we examine both 2-and 3-mask SAQP process characteristics and develop various decomposition methods to achieve higher feature density and 2-D design flexibility. It is demonstrated that by generating assisting mandrels, SAQP layout decomposition can be degenerated into a SADP decomposition problem for which mature algorithms already exist in our EDA industry. Moreover, a spacer-expansion mask concept is introduced and a grouping/coloring algorithm to assign feature colors is developed for 3-mask SAQP layout decomposition. Finally, several 2-D la...
In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lith...
For next-generation technology nodes, multiple patterning lithog-raphy (MPL) has emerged as a key so...
Self-aligned sextuple patterning (SASP) is a promising technique to scale down the half pitch of IC ...
Self-aligned multiple patterning (SAMP) is a promising technology to scale IC devices to 7-nm half p...
In this paper, we present a benchmarking study of directed self-assembly (DSA) and self-aligned mult...
Spacer based self-aligned multiple patterning (SAMP) techniques potentially allow us to scale integr...
To break through 1-D IC layout limitations, we develop computationally efficient 2-D layout decompos...
Spacer based self-aligned multiple patterning (SAMP), when combined with 193 nm immersion or EUV lit...
Self-aligned triple patterning (SATP) technology offers both improved resolution and design flexibil...
Spacer based self-aligned multiple patterning (SAMP), when combined with 193 nm immersion or EUV lit...
Self-aligned triple patterning (SATP) technology offers both improved resolution and design flexibil...
Nowadays the semiconductor industry is continuing to advance the limits of physics as the feature si...
Abstract—The use of multiple-patterning optical lithography for sub-20nm technologies has become ine...
Self-aligned triple patterning (SATP) technique offers both improved resolution and quasi-2D design ...
In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process...
In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lith...
For next-generation technology nodes, multiple patterning lithog-raphy (MPL) has emerged as a key so...
Self-aligned sextuple patterning (SASP) is a promising technique to scale down the half pitch of IC ...
Self-aligned multiple patterning (SAMP) is a promising technology to scale IC devices to 7-nm half p...
In this paper, we present a benchmarking study of directed self-assembly (DSA) and self-aligned mult...
Spacer based self-aligned multiple patterning (SAMP) techniques potentially allow us to scale integr...
To break through 1-D IC layout limitations, we develop computationally efficient 2-D layout decompos...
Spacer based self-aligned multiple patterning (SAMP), when combined with 193 nm immersion or EUV lit...
Self-aligned triple patterning (SATP) technology offers both improved resolution and design flexibil...
Spacer based self-aligned multiple patterning (SAMP), when combined with 193 nm immersion or EUV lit...
Self-aligned triple patterning (SATP) technology offers both improved resolution and design flexibil...
Nowadays the semiconductor industry is continuing to advance the limits of physics as the feature si...
Abstract—The use of multiple-patterning optical lithography for sub-20nm technologies has become ine...
Self-aligned triple patterning (SATP) technique offers both improved resolution and quasi-2D design ...
In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process...
In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lith...
For next-generation technology nodes, multiple patterning lithog-raphy (MPL) has emerged as a key so...
Self-aligned sextuple patterning (SASP) is a promising technique to scale down the half pitch of IC ...