Add to ORKGThe charged states of antisites and interstitials in undoped and n- or p-type Si modulation-doped (GaAl)As superlattices have been determined by the calculated electronic structures using recursion method within tight-binding formalism. Based on the behavior of these point defects, some new mechanisms that describe the self-diffusion and impurity diffusion processes are suggested and discussed.Physics, MultidisciplinarySCI(E)0ARTICLE11506-509
Abstract. A first-principles pseudopotential study of neutral self-interstitial defects in silicon i...
Thesis (Ph. D.)--University of Rochester. College of Engineering and Applied Science. Institute of O...
The ultrahigh doping levels of Si needed in ultradownscaled electronic devices can be achieved formi...
This paper is concerned with superlattice disordering. We use a mathematical model to describe the e...
Intrinsic di-interstitial are stable against the isolated self-interstitial point defects in GaAs m...
Abstract. Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in...
The recent discovery of intrinsic di-interstitial stability against the isolated self-interstitial p...
A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carri...
Based on the tight-binding approximation (TBA), the electronic structures of short-period AlAs/GaAs ...
Abstract. We have mentioned previously that in the third part of the present series of papers, a var...
We study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast t...
The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\sb{\rm x}$Ga$...
The influence of high level of doping in type n-i-p-i crystal structures on electron and hole state ...
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs i...
Analytical solution of the equations describing impurity diffusion due to the migration of nonequili...
Abstract. A first-principles pseudopotential study of neutral self-interstitial defects in silicon i...
Thesis (Ph. D.)--University of Rochester. College of Engineering and Applied Science. Institute of O...
The ultrahigh doping levels of Si needed in ultradownscaled electronic devices can be achieved formi...
This paper is concerned with superlattice disordering. We use a mathematical model to describe the e...
Intrinsic di-interstitial are stable against the isolated self-interstitial point defects in GaAs m...
Abstract. Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in...
The recent discovery of intrinsic di-interstitial stability against the isolated self-interstitial p...
A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carri...
Based on the tight-binding approximation (TBA), the electronic structures of short-period AlAs/GaAs ...
Abstract. We have mentioned previously that in the third part of the present series of papers, a var...
We study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast t...
The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\sb{\rm x}$Ga$...
The influence of high level of doping in type n-i-p-i crystal structures on electron and hole state ...
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs i...
Analytical solution of the equations describing impurity diffusion due to the migration of nonequili...
Abstract. A first-principles pseudopotential study of neutral self-interstitial defects in silicon i...
Thesis (Ph. D.)--University of Rochester. College of Engineering and Applied Science. Institute of O...
The ultrahigh doping levels of Si needed in ultradownscaled electronic devices can be achieved formi...