NEW SI-H INFRARED-ABSORPTION PEAK CORRESPONDING TO THE HYDROGEN-DEFECT SHALLOW DONORS IN SILICON

A new Si-H infrared absorption peak at 2016 cm(-1) is found to be related to the hydrogen-defect shallow donors apart from the 2162cm(-1) peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of the complexes causing the Si-H IR peaks and hydrogen-defect shallow donors is discussed.Physics, MultidisciplinarySCI(E)2ARTICLE1108-1125