In this paper, we present our work on the electrodeposited CdSe semiconducting nanowires. Using a low cost and low temperature approach by electrochemistry, CdSe nanowires were successfully grown using polycarbonate template. Depending on the host pore dimension of the substrate, wire diameter can be varied from 400 nm down to 30 nm and wire length from a few microns to tens microns. The as-deposited nanowires exhibit predominantly metastable zinc blende (ZB) structure but after the heat treatment they become wurtzite (W) structure. A combination of different characterization techniques, such as X-ray diffraction, SEM, TEM-HRTEM and EDXS, was used to investigate the growth morphology, crystalline structure and defects in the nanowires. The ...
Semiconducting nanowires frequently have enhanced properties and unique functionality compared to th...
WOS:000590138400017Cadmium selenide (n-CdSe) thin films were grown on a silicon substrate with a pol...
The preparation by electrodeposition of transverse nanowire electroluminescent junctions (tn-ELJs) i...
Semiconducting, metal, and multi-segmented nanowires of 200 nm diameters with lengths up to 10_m wer...
Electrodeposited nano-materials have huge potential to reduce the cost of nano and micro fabrication...
Electrodeposited nano-materials have huge potential to reduce the cost of nano and micro fabrication...
In this paper, we report the fabrication of CdSe nanowires using electrochemical technique known as ...
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched pol...
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched pol...
The Cadmium Selenide (CdSe) nanowire thin films were prepared on glass substrates by chemical bath d...
CdS nanotubes and nanowires have been synthesized with controlled dimensions by means of template-el...
CdS is one of the most important II-VI semiconductors, with applications in solar cells, optoelectro...
II-VI group compound semiconductors such as CdS, CdSe, and CdTe nanowire arrays have been prepared b...
Cadmium sulfide (CdS) nanowires were electrosynthesized within the pores of the anodic alumina membr...
The local luminescence properties of individual CdSe nanowires composed of segments of zinc blende a...
Semiconducting nanowires frequently have enhanced properties and unique functionality compared to th...
WOS:000590138400017Cadmium selenide (n-CdSe) thin films were grown on a silicon substrate with a pol...
The preparation by electrodeposition of transverse nanowire electroluminescent junctions (tn-ELJs) i...
Semiconducting, metal, and multi-segmented nanowires of 200 nm diameters with lengths up to 10_m wer...
Electrodeposited nano-materials have huge potential to reduce the cost of nano and micro fabrication...
Electrodeposited nano-materials have huge potential to reduce the cost of nano and micro fabrication...
In this paper, we report the fabrication of CdSe nanowires using electrochemical technique known as ...
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched pol...
CdTe nanowires with controlled composition were cathodically electrodeposited using track-etched pol...
The Cadmium Selenide (CdSe) nanowire thin films were prepared on glass substrates by chemical bath d...
CdS nanotubes and nanowires have been synthesized with controlled dimensions by means of template-el...
CdS is one of the most important II-VI semiconductors, with applications in solar cells, optoelectro...
II-VI group compound semiconductors such as CdS, CdSe, and CdTe nanowire arrays have been prepared b...
Cadmium sulfide (CdS) nanowires were electrosynthesized within the pores of the anodic alumina membr...
The local luminescence properties of individual CdSe nanowires composed of segments of zinc blende a...
Semiconducting nanowires frequently have enhanced properties and unique functionality compared to th...
WOS:000590138400017Cadmium selenide (n-CdSe) thin films were grown on a silicon substrate with a pol...
The preparation by electrodeposition of transverse nanowire electroluminescent junctions (tn-ELJs) i...