We study the surface local density of states and the transport properties of a three-dimensional (3D) topological insulator (TI) in the presence of a uniform spin-splitting Zeeman field. We find chiral edge states exist on the gapped surfaces of the 3D TI, which can be considered as interface states between domains of massive and massless Dirac fermions. Effectively these states are the result of splitting of a perfect interface conducting channel. This picture is confirmed by the Landauer-Buttiker calculations in four-terminal Hall bars made of 3D TIs. It is demonstrated that the difference between the clockwise and counterclockwise transmission coefficients of the two neighboring terminals is approximately one-half, which suggests that th...
In this thesis, I will describe our electrical transport approach in studying three-dimensional topo...
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator...
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensi...
We study the surface local density of states and the transport properties of a three-dimensional (3D...
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be d...
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be d...
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be d...
Topological insulators(TIs) constitute a novel state of quantum matter which possesses non-trivial t...
Electrical transport in three dimensional topological insulators (TIs) occurs through spin-momentum ...
Interfacial coupling between the top and the bottom surface states in thin-film 3-dimensional (3D) t...
Interfacial coupling between the top and the bottom surface states in thin-film 3-dimensional (3D) t...
Here we study how interface and edge perturbations as well as a size effect can be used to manipulat...
In this thesis, I will describe our electrical transport approach in studying three-dimensional topo...
In this letter we theoretically demonstrate how an interface perturbation and size effect can be use...
In this letter we theoretically demonstrate how an interface perturbation and size effect can be use...
In this thesis, I will describe our electrical transport approach in studying three-dimensional topo...
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator...
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensi...
We study the surface local density of states and the transport properties of a three-dimensional (3D...
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be d...
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be d...
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be d...
Topological insulators(TIs) constitute a novel state of quantum matter which possesses non-trivial t...
Electrical transport in three dimensional topological insulators (TIs) occurs through spin-momentum ...
Interfacial coupling between the top and the bottom surface states in thin-film 3-dimensional (3D) t...
Interfacial coupling between the top and the bottom surface states in thin-film 3-dimensional (3D) t...
Here we study how interface and edge perturbations as well as a size effect can be used to manipulat...
In this thesis, I will describe our electrical transport approach in studying three-dimensional topo...
In this letter we theoretically demonstrate how an interface perturbation and size effect can be use...
In this letter we theoretically demonstrate how an interface perturbation and size effect can be use...
In this thesis, I will describe our electrical transport approach in studying three-dimensional topo...
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator...
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensi...