A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

In this paper a potential based model for monocrystalline silicon thin film transistor (TFT) systems on glass (SOG) substrate from the accumulation to the strong-inversion region is developed. By solving the complete dimensional (1D) Poisson's equation, the potential distribution in the channel is obtained. The analytic drain current is expressed accurately base on the potential solution. Compared with TCAD simulations, the proposed current model shows less than 1.05% errors, with the doping concentrations ranging from 1.5??10 16cm-3 to 1.5??1018cm-3 and different bias conditions. The proposed model is appropriate for precise and quick circuit simulation. ?2010 IEEE.EI