Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum boltzmann equation

The quantum Boltzmann equation (QBE) is solved using self-consistent ensemble full band Monte Carlo (MC) method, and the Si and Ge UTB MOSFET is simulated use this method. QBE can be solved using full band MC method with the same procedure as Boltzmann equation (BTE) including the quantum potential and collision broadening. The quantum potential is self-consistently calculated in very time steps just like Poisson's potential. The results show that 2-D self-consistence full band Monte Carlo method based on QBE can be used to investigate the 2-D quantum effects in sub-100nm semiconductor devices.EI