Non-stationary transports in sub-100nm UTB mosfet by using QBE based Monte Carlo method

The non-stationary transports effects in sub-100nm UTB MOSFET are investigated by using a 2-D self-consistent full-band Monte Carlo device simulator based on quantum Boltzmann equation. The results show the non-stationary transports affect the device characters significantly, the device drive current keep increasing due to the carriers velocity overshooting. The gate bias affects the carrier transports at source junction significantly.EI