Numerical simulation study on chemical reaction-transport process of AlN MOCVD growth

The numerical simulation study on the chemistry-transport process for the growth of AlN in a rotating disc MOCVD reactor has been carried out. The effects of the reactor height, pressure and the adduct-derived trimer on the growth of AlN chemical reactions are particularly investigated. The results show that the reaction pathway of AlN MOCVD growth is dominated by the adduct formation path of Al(CH3)3 and NH3, and the pyrolysis of Al(CH3)3 is weak. The adduct-derived dimer is the main film precursor; the trimer is the main precursor for nanoparticles. Lowering the reactor height can reduce the parasitic reaction, enhance the pyrolysis and increase the growth rate. Increasing the pressure can increase the parasitic reaction and reduce the growth rate. By adding the trimer contribution for the film growth, the growth rate increases nearly 4 times which verifies that the trimer does not contribute to the film growth, but only provides the nanoparticles.EI051179-11854