Development of low temperature amorphous tin-doped indium oxide thin-film transistors technology

We successfully fabricated high performance amorphous tin-doped indium oxide (a-ITO) thin film transistors (TFTs) at low temperature (?? 150 ??C) for full-transparent, flexible and large area electronics applications. The fabricated a-ITO TFT has a typical threshold voltage (Vth) of about 0.12 V, an acceptable carrier mobility of 7.6 cm2/V??s, and a steep subthreshold swing of 174 mV/decade. The on/off current ratio is more than 1??107. ? 2014 IEEE.EI