The superconducting and transport properties were studied to probe the mixing process in Al/Si multilayer films during Ar ion bombardment at liquid helium temperature. From the dose-dependences of the superconducting transition temperature T//c and the electrical resistance R//0, an effective diffusion constant D* was evaluated. A good agreement between this D* with the value of the ballistic mixing theory suggests that, at low temperatures where diffusion is hardly activated the ballistic effect predominates the mixing process for the Al/Si system, where the heat of mixing has a small negative value.EI0156-60B3
SEM observations have shown that irradiation induced interaction of the aluminum cladding with urani...
Silicon diffusion in aluminium thin films was measured using the configuration of in- diffusion from...
[[abstract]]The contact resistance between Al(Ge) alloys of various compositions and n+si has been m...
Instruments & InstrumentationNuclear Science & TechnologyPhysics, Atomic, Molecular &...
Ion beam mixing of multilayered Al/Si films at low temperature ( less than 10 K) was conducted to st...
Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transiti...
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced supercondu...
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al th...
The diffusion and segregation of ion implanted Al in SiO2 and Si layers were studied for several exp...
The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb‐Si bilayer samples was measured...
Si was diffused along the evaporated Al layer of an integrated-circuit structure at temperatures bet...
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of alumin...
We have characterized the interaction of isotropic and anisotropic atomic transport mechanisms in th...
Aluminum as the fastest diffusing acceptor dopant in silicon is commonly used for the fabrication of...
Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, ...
SEM observations have shown that irradiation induced interaction of the aluminum cladding with urani...
Silicon diffusion in aluminium thin films was measured using the configuration of in- diffusion from...
[[abstract]]The contact resistance between Al(Ge) alloys of various compositions and n+si has been m...
Instruments & InstrumentationNuclear Science & TechnologyPhysics, Atomic, Molecular &...
Ion beam mixing of multilayered Al/Si films at low temperature ( less than 10 K) was conducted to st...
Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transiti...
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced supercondu...
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al th...
The diffusion and segregation of ion implanted Al in SiO2 and Si layers were studied for several exp...
The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb‐Si bilayer samples was measured...
Si was diffused along the evaporated Al layer of an integrated-circuit structure at temperatures bet...
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of alumin...
We have characterized the interaction of isotropic and anisotropic atomic transport mechanisms in th...
Aluminum as the fastest diffusing acceptor dopant in silicon is commonly used for the fabrication of...
Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, ...
SEM observations have shown that irradiation induced interaction of the aluminum cladding with urani...
Silicon diffusion in aluminium thin films was measured using the configuration of in- diffusion from...
[[abstract]]The contact resistance between Al(Ge) alloys of various compositions and n+si has been m...