Characteristics of WNx/n-GaAs Schottky barriers

The characterization of WNx/n-GaAs Schottky barriers prepared by magnetron sputtering is investigated using Auger electron spectrum, Rutherford backscattering spectra, current-voltage and capacitance-voltage measurements. The results show that WNx/n-GaAs Schottky contact annealed at 800??C is thermally stable and maintain excellent rectifying characteristics. The corresponding barrier height of 0.79 eV and ideality factor of 1.19 are obtained. Our study suggests that WNx is a good material for self-aligned GaAs MESFET process.EI07556-5601