Study of 1.35 ��m InGaAsP/InP quantum well structure grown by LPE

1.35??m InGaAsP/InP separate confinement single quantum well (SQW) structure were successfully grown by liquid-phase epitaxy (LPE) technique for the first time in China. The SQW structures were studied by the transmission electron microscope cross-section technique and photoluminescence (PL) at 10K and 77K. The well width and transition layer thickness are 160 Angstrom and 30 Angstrom, respectively. The strong free excitonic peaks assigned to the transition between the n=1 electron quantum level and the n=1 heavy-(light-) hole quantum level were observed in the PL spectrum. The photon energy difference between the two photoluminescence peaks is about 8.3meV, and the full width at half maximum of the PL peak at 10K is 20meV.EI09540-5441