Charge breakdown of Ar-O2 thermal grown SiO2 was investigated by time dependent dielectric breakdown (TDDB) characteristics under constant current stresses. The results show (1) charge to breakdown, QBD, cannot be constant but is dependent on the oxide electric field, Eox. (2) anode field to breakdown, EBD, is approximately a constant. (3) electric field acceleration factor, ??, is neither a constant nor proportional to 1/Eox2, is a more complex dependence on the electric field.EI011708-7111
The physical origin of post soft breakdown (SBD) current saturation behavior of ultrathin gate oxide...
The quality of thin gate oxides grown on separation by implantation of oxygen substrates was examine...
120 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.For ultrathin oxides, a new t...
We have compared the thermal damage in ultrathin gate SiO2 layers of 5.6 and 3 nm thickness after in...
The ramped-field technique has been widely used for determining dielectric breakdown in thin insulat...
International audienceIn this study, we have investigated the electrical properties of the failure m...
Comparing the characteristics of gate voltage shift (delta V-gw) to Time-Dependent Dielectric Breakd...
This chapter updates Chapter 6 of Volume 1 and reviews the testing methods used for characterizing t...
In this paper, a physical model is presented for estimating the mean intrinsic breakdown time Of SiO...
With the scaling of the CMOS technology and the associated gate oxide thickness, the reliability of ...
After Fowler-Nordheim stress, since SiO2 charge trapping occurs up to final dielectric breakdown, ox...
Abstract—The microelectronics industry owes its considerable success largely to the existence of the...
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still...
The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS techn...
The continued reduction in gate length of metal-oxide-semiconductor (MOS) transistors has required a...
The physical origin of post soft breakdown (SBD) current saturation behavior of ultrathin gate oxide...
The quality of thin gate oxides grown on separation by implantation of oxygen substrates was examine...
120 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.For ultrathin oxides, a new t...
We have compared the thermal damage in ultrathin gate SiO2 layers of 5.6 and 3 nm thickness after in...
The ramped-field technique has been widely used for determining dielectric breakdown in thin insulat...
International audienceIn this study, we have investigated the electrical properties of the failure m...
Comparing the characteristics of gate voltage shift (delta V-gw) to Time-Dependent Dielectric Breakd...
This chapter updates Chapter 6 of Volume 1 and reviews the testing methods used for characterizing t...
In this paper, a physical model is presented for estimating the mean intrinsic breakdown time Of SiO...
With the scaling of the CMOS technology and the associated gate oxide thickness, the reliability of ...
After Fowler-Nordheim stress, since SiO2 charge trapping occurs up to final dielectric breakdown, ox...
Abstract—The microelectronics industry owes its considerable success largely to the existence of the...
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still...
The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS techn...
The continued reduction in gate length of metal-oxide-semiconductor (MOS) transistors has required a...
The physical origin of post soft breakdown (SBD) current saturation behavior of ultrathin gate oxide...
The quality of thin gate oxides grown on separation by implantation of oxygen substrates was examine...
120 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.For ultrathin oxides, a new t...
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