Add to ORKGThe EPR study of gamma-ray irradiated SI GaAs:Cr is reported. The experimental results show that gamma irradiations not only change the photo-quenching behavior of Si line but also induce a new spectrum of g=2.08 and linewidth 3??10-2T. The new spectrum is isotropic and has no photo-quenching behavior. The preliminary study shows that the new spectrum may be related to the VAs.EI04261-2631
Two thermal donor related EPR centers Si-NL8 and Si-NL10 were studied by the photo-EPR technique. Th...
[[abstract]]Gamma-irradiated poly(methyl methacrylate) (PMMA) with high doses 320, 480, 640 and 800 ...
We investigated Semi-Insulating (SI) GaAs Schottky diode particle detectors, fabricated either on si...
The photo-EPR study of semi-insulating GaAs:Cr is reported. For non-irradiated samples the temperatu...
SIGLEAvailable from British Library Lending Division - LD:D55946/85 / BLDSC - British Library Docume...
The gamma radiation defects were studied by the deep level transient spectroscopy (DLTS) and the con...
The effects of gamma irradiation on the light intensity, total current, spectral characteristics, an...
Photoluminescence (PL) spectroscopy has been used to study the silicon incorporation in polar GaAs o...
We report a study on gamma irradiated porous Si. The electron paramagnetic resonance study on porous...
Three new EPR signals labelled FR1, FR2 and FR3 have been observed in undoped as grown LEC GaAs. The...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
We report an electron paramagnetic resonance (EPR) study of gamma rays irradiation effects on an oxy...
A systematic investigation of the changes in structural and optical properties of a semi-insulating ...
Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorp...
An anisotropic EPR signal was observed in porous Si. According to its symmetry and g value, the EPR ...
Two thermal donor related EPR centers Si-NL8 and Si-NL10 were studied by the photo-EPR technique. Th...
[[abstract]]Gamma-irradiated poly(methyl methacrylate) (PMMA) with high doses 320, 480, 640 and 800 ...
We investigated Semi-Insulating (SI) GaAs Schottky diode particle detectors, fabricated either on si...
The photo-EPR study of semi-insulating GaAs:Cr is reported. For non-irradiated samples the temperatu...
SIGLEAvailable from British Library Lending Division - LD:D55946/85 / BLDSC - British Library Docume...
The gamma radiation defects were studied by the deep level transient spectroscopy (DLTS) and the con...
The effects of gamma irradiation on the light intensity, total current, spectral characteristics, an...
Photoluminescence (PL) spectroscopy has been used to study the silicon incorporation in polar GaAs o...
We report a study on gamma irradiated porous Si. The electron paramagnetic resonance study on porous...
Three new EPR signals labelled FR1, FR2 and FR3 have been observed in undoped as grown LEC GaAs. The...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
We report an electron paramagnetic resonance (EPR) study of gamma rays irradiation effects on an oxy...
A systematic investigation of the changes in structural and optical properties of a semi-insulating ...
Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorp...
An anisotropic EPR signal was observed in porous Si. According to its symmetry and g value, the EPR ...
Two thermal donor related EPR centers Si-NL8 and Si-NL10 were studied by the photo-EPR technique. Th...
[[abstract]]Gamma-irradiated poly(methyl methacrylate) (PMMA) with high doses 320, 480, 640 and 800 ...
We investigated Semi-Insulating (SI) GaAs Schottky diode particle detectors, fabricated either on si...