Properties of minority carrier traps and the hole traps in semi-insulating LEC GaAs after Si-and Be-coimplantation

The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- and Be- coimplanted undoped semi-insulating LEC GaAs. Four electron traps and two hole traps were observed by majority carrier pulse DLTS measurement. The observed phenomena can be successfully explained by the theory of the capture and thermal emission of the minority carrier at the trap. The hole apparent activation energies were measured to be 0.54 and 0.57eV for the two hole traps respectively by the constant temperature capacitance transient technique, which are newly observed defects that relate to the Si- and Be- coimplantation in semi-insulating LEC GaAs.EI081352-13594