Add to ORKGThe effect of implantation dose, implantation methods single implantation, sequential implantation) on characteristics and structures have been described by techniques of RBS and TEM. Especially the transition region of Si/SiO2 interface is emphatically studied. The results show that the sequential implantation and annealing (compared with single implantation in the same implantation dose) can not only evidently improve the quality of top layer and buried layer of SIMOX, but also evidently reduce the width of Si/SiO2 interface transition region.EI0574-762
Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have be...
In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers t...
SIMOX (separation by implanted oxygen) has been emerged as one of the leading SOI (silicon-on-insula...
The microstructures of SIMOX (separation by implanted oxygen) structures implanted at 170keV with O+...
The structures of SIMOX wafer implanted at 170keV with doses of (0.6-1.8) ??1018/cm2 at 680??C follo...
The effects of implantation conditions and annealing conditions on the formation of buried oxide lay...
The effect of annealing ambient on the buried oxide formation processes in high-dose oxygen implante...
The effect of implantation dose and annealing conditions on the microstructure of ultra-thin SIMOX m...
In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, ...
The formation of SIMOX structure by two step annealing (550??C 60 h + 1250??C 2 h) is investigated b...
Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have be...
The effects of implantation dose, energy, and annealing conditions on the microstructure and the for...
Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have be...
The aim of the project is the preparation and optimization of SOI (Silicon On Insulator) substrates ...
Separation by implanted oxygen (SIMOX) material has proven to provide an extended temperature range ...
Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have be...
In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers t...
SIMOX (separation by implanted oxygen) has been emerged as one of the leading SOI (silicon-on-insula...
The microstructures of SIMOX (separation by implanted oxygen) structures implanted at 170keV with O+...
The structures of SIMOX wafer implanted at 170keV with doses of (0.6-1.8) ??1018/cm2 at 680??C follo...
The effects of implantation conditions and annealing conditions on the formation of buried oxide lay...
The effect of annealing ambient on the buried oxide formation processes in high-dose oxygen implante...
The effect of implantation dose and annealing conditions on the microstructure of ultra-thin SIMOX m...
In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, ...
The formation of SIMOX structure by two step annealing (550??C 60 h + 1250??C 2 h) is investigated b...
Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have be...
The effects of implantation dose, energy, and annealing conditions on the microstructure and the for...
Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have be...
The aim of the project is the preparation and optimization of SOI (Silicon On Insulator) substrates ...
Separation by implanted oxygen (SIMOX) material has proven to provide an extended temperature range ...
Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have be...
In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers t...
SIMOX (separation by implanted oxygen) has been emerged as one of the leading SOI (silicon-on-insula...