Add to ORKGIn the new analytical model of polysilicon emitter transistor, a symbolical system of carrier transport mechanism was designed by classifying the physical parameters into interfacial physical parameters and vertical structural parameters. The analytical expressions for the important property parameters of the transistor were given. The conclusion about the current gain of RCA device, HF device and the device with large area breaking oxide was stated.EI06443-4511
Polysilicon gate depletion is an important eect that degrades the circuit performance of deep submic...
A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon t...
Abstract-A physical model considering the effects of grain bound-aries on the turn-on behavior of po...
An analytical model is proposed by including carrier transport mechanisms which previous unified ana...
A new method was presented in this article to explain high current gain of polysilicon emitter trans...
A new method was presented in this article to explain high current gain of polysilicon emitter trans...
Considering polysilicon/silicon interfacial oxide capacitance, a new analytical model of emitter tra...
A model for the base current of the polysilicon emitter bipolar transistor is presented. An analytic...
Based on the comprehensive analytical model published, an analytical theory relating PET's curr...
This thesis is devoted to a theoretical study of polysilicon emitter bipolar transistors, and in par...
This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for ...
A general model for the base current of a polysilicon BJT (bipolar junction transistor) is presented...
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by...
In this paper, a one-dimensional model is proposed to analyse heavy doped emitters of ...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
Polysilicon gate depletion is an important eect that degrades the circuit performance of deep submic...
A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon t...
Abstract-A physical model considering the effects of grain bound-aries on the turn-on behavior of po...
An analytical model is proposed by including carrier transport mechanisms which previous unified ana...
A new method was presented in this article to explain high current gain of polysilicon emitter trans...
A new method was presented in this article to explain high current gain of polysilicon emitter trans...
Considering polysilicon/silicon interfacial oxide capacitance, a new analytical model of emitter tra...
A model for the base current of the polysilicon emitter bipolar transistor is presented. An analytic...
Based on the comprehensive analytical model published, an analytical theory relating PET's curr...
This thesis is devoted to a theoretical study of polysilicon emitter bipolar transistors, and in par...
This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for ...
A general model for the base current of a polysilicon BJT (bipolar junction transistor) is presented...
It was demonstrated that the common emitter current gain of bipolar transistors could be improved by...
In this paper, a one-dimensional model is proposed to analyse heavy doped emitters of ...
This thesis describes the results of an experimental and theoretical study of the physics of polysil...
Polysilicon gate depletion is an important eect that degrades the circuit performance of deep submic...
A compact solution for the ratio of the excess minority carrier charge stored into the polysilicon t...
Abstract-A physical model considering the effects of grain bound-aries on the turn-on behavior of po...