Add to ORKGHeterojunction of solid C70 and p-type crystalline Si has been made. Current-voltage measurement shows that C70/p-Si contact is strongly rectifying, and its rectification ratio is greater than 104 at??2V. Current-temperature measurement shows an exponential dependence of current on reciprocal temperature, from which we determine the effective barrier height as 0.27eV for C70/p-Si.EI010801-8041
Excess current and capacitance phenonema were observed for the first time on a CrSi2/p-type crystall...
The current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p...
Mo/Si contacts to n-GaAs are fabricated by deposition of three alternate layers of Mo and Si using e...
Heterojunctions of solid C70 and n- or p-type crystalline Si have been made. Current-voltage measure...
The electrical properties of the heterojunction of solid C60/n-type GaAs were studied. The results o...
Solid C70/GaAs contacts were fabricated by vacuum deposition of solid C70 films on the n-type and p-...
C60/n-GaN contacts have been fabricated by depositing solid C60 on n-GaN films, and their electrical...
Rectifying heterojunctions of PPy(p-TS) with n-Si were formed by mechanical contact. The IV characte...
Solid C60/p-type GaAs heterojunctions have been made by deposition of solid C60 film on the epitaxia...
In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique....
Energetically deposited graphitic carbon (C) is known to form high-endurance rectifying contacts to ...
The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been m...
Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous s...
In this work, the Schottky barrier height (SBH) of W on n-type and p-type Si1−x−yGexCy pseudomorphic...
The present work was undertaken in order to determine the effect of var i-ous thermal treatments up ...
Excess current and capacitance phenonema were observed for the first time on a CrSi2/p-type crystall...
The current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p...
Mo/Si contacts to n-GaAs are fabricated by deposition of three alternate layers of Mo and Si using e...
Heterojunctions of solid C70 and n- or p-type crystalline Si have been made. Current-voltage measure...
The electrical properties of the heterojunction of solid C60/n-type GaAs were studied. The results o...
Solid C70/GaAs contacts were fabricated by vacuum deposition of solid C70 films on the n-type and p-...
C60/n-GaN contacts have been fabricated by depositing solid C60 on n-GaN films, and their electrical...
Rectifying heterojunctions of PPy(p-TS) with n-Si were formed by mechanical contact. The IV characte...
Solid C60/p-type GaAs heterojunctions have been made by deposition of solid C60 film on the epitaxia...
In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique....
Energetically deposited graphitic carbon (C) is known to form high-endurance rectifying contacts to ...
The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been m...
Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous s...
In this work, the Schottky barrier height (SBH) of W on n-type and p-type Si1−x−yGexCy pseudomorphic...
The present work was undertaken in order to determine the effect of var i-ous thermal treatments up ...
Excess current and capacitance phenonema were observed for the first time on a CrSi2/p-type crystall...
The current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p...
Mo/Si contacts to n-GaAs are fabricated by deposition of three alternate layers of Mo and Si using e...