INVESTIGATION OF SILICIDE FORMATION FROM Nb/Si MULTILAYER FILM AND As OUT-DIFFUSION DURING NbSi2 FORMATION.

The formation of NbSi//2 from Nb/Si multilayer film, its properties and the out-diffusion of implanted As atoms during NbSi//2 formation were investigated Rutherford backscattering of nine layers of silicon and eight layers of niobium evaporated alternatively on a silicon substrate. After annealing at 900 degree C for 30 minutes, the Nb/Si multilayer films became a silicide film of good quality. In comparison with the silicide formed from a single metal layer, the multilayer structure shows less As out-diffusion and loss during silicide formation. In comparison with routine 900 degree C 30 minutes oven annealing for silicide formation, scanning electron beam annealing further decreases the out-diffusion and loss of implanted As atoms due to its transient annealing character.EI0132-37