Characteristics of interfaces morphology of nano-crystalline silicon films

Using Plasma Enhanced Chemical Vapor Deposition (PECVD) method, the authors have fabricated the nano-crystalline silicon films (nc-Si:H). They observed the microstructure of the nc-Si:H films employing HREM and STM techniques. They have obtained a lot of interface textures in the network of nc-Si:H film and got the distribution of silicon atoms in grain and interface region for the first time. It is noticed that there still is short range order for the silicon atoms existing at interface areas rather than a perfect random.EI0171-731