Add to ORKGThe effects of the additional MeV Si+ ion irradiation on the properties of 50keV BF2 ion implanted Si(100) have been studied. A noticeable reduction of the secondary defects in the BF2 damaged region was observed when a buried amorphous layer was formed by an additional irradiation of 1.0MeV Si+ ions prior to thermal annealing. As for the electrical properties of the BF2 doped layer, it is found that MeV Si+ ion irradiation induces a broader profile of the carrier concentration and a higher electrical activation of B atoms, while the diffusion of B atoms is reduced.EI09706-7121
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of t...
Boron activation and carrier mobility were measured after low temperature furnace heat treatments, i...
The effects of 70 MeV irradiation of iron ions in p-type silicon at fluences between 1 x 10(12) and ...
Reduction of secondary defects in 50 keV, 2x10(15) BF2/cm(2) implanted Si(100) has been studied by R...
The effects of post-ion implantation on the properties of P + N junction formed by BF2 ion implantat...
[[abstract]]The annealing behavior of residual defects in high-dose BF2+-implanted (001)Si under dif...
A new concept of ion beam defect engineering is proposed. Reduction of secondary defects in 1 MeV A...
Shallower carrier concentration profiles in 50 keV P+-implanted Si(100) after annealing at 1000-degr...
[[abstract]]The annealing behavior of microstructural defects in 20 keV, 1 x 10(16)/cm2 BF2+ implant...
Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2E...
The electrical activation of B in Si after ion implantation in the energy range between 5 and 160 ke...
The electrical dopant activation of high-dose 49BF2 ion implanted layers was investigated as a funct...
The electrical and structural characteristics of secondary defects in regrown amorphous layers forme...
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of ...
The authors report on the effects of ion implantation and rapid thermal annealing on the electrical ...
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of t...
Boron activation and carrier mobility were measured after low temperature furnace heat treatments, i...
The effects of 70 MeV irradiation of iron ions in p-type silicon at fluences between 1 x 10(12) and ...
Reduction of secondary defects in 50 keV, 2x10(15) BF2/cm(2) implanted Si(100) has been studied by R...
The effects of post-ion implantation on the properties of P + N junction formed by BF2 ion implantat...
[[abstract]]The annealing behavior of residual defects in high-dose BF2+-implanted (001)Si under dif...
A new concept of ion beam defect engineering is proposed. Reduction of secondary defects in 1 MeV A...
Shallower carrier concentration profiles in 50 keV P+-implanted Si(100) after annealing at 1000-degr...
[[abstract]]The annealing behavior of microstructural defects in 20 keV, 1 x 10(16)/cm2 BF2+ implant...
Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2E...
The electrical activation of B in Si after ion implantation in the energy range between 5 and 160 ke...
The electrical dopant activation of high-dose 49BF2 ion implanted layers was investigated as a funct...
The electrical and structural characteristics of secondary defects in regrown amorphous layers forme...
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of ...
The authors report on the effects of ion implantation and rapid thermal annealing on the electrical ...
Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of t...
Boron activation and carrier mobility were measured after low temperature furnace heat treatments, i...
The effects of 70 MeV irradiation of iron ions in p-type silicon at fluences between 1 x 10(12) and ...