Secondary ion mass spectrometry of erbium and oxygen co-implanted in GaAs

Er and O ions were co-implanted in III-V compound semiconductor GaAs (GaAs:Er,O). After face to face annealing the sharp photoluminescence (PL) spectra were observed at 1.538??m, which correspond to the transition from first excited state 4I13/2 to the ground state 4I15/2 of Er3+. The intensity of PL was enhanced about ten times in comparison with the only Er-implanted GaAs:Er. Depth profiles of Er-implanted concentration were obtained and analyzed by Secondary Ion Mass Spectrometry (SIMS) and Rutherford Back Scattering (RBS) measurements as implanted and annealed. Depth profiles of Er and O co-implanted were analyzed by SIMS. The results indicate that a kind of optically active efficient luminescence center is formed in GaAs:Er,O.EI06413-4171