Add to ORKGThe radiation damage of GaAs is investigated during transmutation doping. The results show that there is capture nuclear reaction between thermal neutron and GaAs and the final product Ge as amphoteric impurity is induced. The effects of defect configuration and thermal behavior on the electrical properties of GaAs during thermal recovery are described.EI04347-3513
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and...
International audienceThis work focuses on the radiation response of Group IV (Si, Ge, SiC, diamond)...
Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep spa...
In this fast developing era of technological advancement, semiconductor devices hold vital key due t...
This study investigates the effects of neutron radiation on reverse bias characteristics of commerci...
Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By i...
Changes in electrical properties of n-GaAs as a result of irradiations with fast neutrons have been ...
Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the dev...
This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ...
GaAs Schottky and laser diodes are irradiated with high energy neutrons and the resultant trap and d...
Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and...
Implanted channel GaAs MESFETs subjected to neutron irradiation show large inodifications of the pin...
International audienceThis work is a first tentative to explore, by simulation, the radiation respon...
This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron p...
Implanted channel GaAs MESFETs subjected to neutron irradiation show large modifications of the pinc...
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and...
International audienceThis work focuses on the radiation response of Group IV (Si, Ge, SiC, diamond)...
Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep spa...
In this fast developing era of technological advancement, semiconductor devices hold vital key due t...
This study investigates the effects of neutron radiation on reverse bias characteristics of commerci...
Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By i...
Changes in electrical properties of n-GaAs as a result of irradiations with fast neutrons have been ...
Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the dev...
This work reports the effect of gamma (γ-) irradiation on dilute GaAsN with nitrogen concentrations ...
GaAs Schottky and laser diodes are irradiated with high energy neutrons and the resultant trap and d...
Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and...
Implanted channel GaAs MESFETs subjected to neutron irradiation show large inodifications of the pin...
International audienceThis work is a first tentative to explore, by simulation, the radiation respon...
This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron p...
Implanted channel GaAs MESFETs subjected to neutron irradiation show large modifications of the pinc...
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and...
International audienceThis work focuses on the radiation response of Group IV (Si, Ge, SiC, diamond)...
Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep spa...