Electrical properties of the contact of solid C60 and n-GaN

C60/n-GaN contacts have been fabricated by depositing solid C60 on n-GaN films, and their electrical properties were measured. We find that the contact is a strongly rectifying heterojunction with a rectification ratio greater than 106, and its ideal factor is close to 1. Current-temperature measurement shows an exponential dependence of current on reciprocal temperature, from which the effective barrier height is determined to be 0.535 eV. The series resistance measured decreases with the increase of the forward voltage and finally tends to be a constant value.EI04333-3372