Add to ORKGBased on iteration method with initial low injected minority carrier profiles, analytical expressions of collector current density and base transit time are presented. Comparing the analytical results with the numeric, following conclusion is obtained: under the condition of injected emitter-base junction voltage VBE&le1.0 V, the analytical expressions of the collector current density and the base transit time with three time iteration processions are valid.EI
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The paper demonstrates an experimental way of estimating the excess minority carriers charge stored ...
The base current density J(B) is an important parameter in determining the common-emitter current ga...
Based on iteration method with initial small injected minority carrier profiles, analytical expressi...
An analytical model of collector current density and base transit time valid for any injection level...
The main objective of this paper is to show that majority carrier current needs to be taken into acc...
The analytical equations of collector and base currents and emitter—base and collector—base diffusio...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
Using the experimental set up of Sparkes1 a method of determining the effective life time of minorit...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the eff...
We present a set of closed form analytical solutions of the transport equation in the base of bipola...
As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the eff...
This paper presents a detailed study on the effects of high-level free-carrier injection on the base...
This paper presents a detailed study on the effects of high-level free-carrier injection on the base...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The paper demonstrates an experimental way of estimating the excess minority carriers charge stored ...
The base current density J(B) is an important parameter in determining the common-emitter current ga...
Based on iteration method with initial small injected minority carrier profiles, analytical expressi...
An analytical model of collector current density and base transit time valid for any injection level...
The main objective of this paper is to show that majority carrier current needs to be taken into acc...
The analytical equations of collector and base currents and emitter—base and collector—base diffusio...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
Using the experimental set up of Sparkes1 a method of determining the effective life time of minorit...
In order to derive analytical models of minority carrier transport in quasi-neutral base region of a...
As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the eff...
We present a set of closed form analytical solutions of the transport equation in the base of bipola...
As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the eff...
This paper presents a detailed study on the effects of high-level free-carrier injection on the base...
This paper presents a detailed study on the effects of high-level free-carrier injection on the base...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The paper demonstrates an experimental way of estimating the excess minority carriers charge stored ...
The base current density J(B) is an important parameter in determining the common-emitter current ga...