INVESTIGATION OF ION-BEAM INDUCED PHASE-TRANSFORMATION IN NI/SI, NB/SI, MO/SI AND TI/SI SYSTEMS

YANG, XH
MAO, SN
CHEN, J
LIU, JR
YANG, F
GAO, WY
WANG, Y

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Publication date

January 1989

DOI

10.1016/0042-207X(89)90193-0

Publisher

真空

ISSN

0042-207X

Journal

issn:0042-207X

Abstract

The ion-induced intermixing of atoms between a thin metal film (Ni, Nb, Mo and Ti) and its silicon substrate was investigated. With a dose ranging from 5 ?? 1014 to 5 ?? 1016 Xe2+ cm-2 at an implantation temperature from LN2T to 400??C, many crystal silicide phases were formed. Differences from predicted behavior have been formed. At high ion dosages, the sequence of the phase transformation is influenced. Some possible explanations are given.Materials Science, MultidisciplinaryPhysics, AppliedSCI(E)EI0ARTICLE2-4191-1933

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INVESTIGATION OF ION-BEAM INDUCED PHASE-TRANSFORMATION IN NI/SI, NB/SI, MO/SI AND TI/SI SYSTEMS

Abstract

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INVESTIGATION OF ION-BEAM INDUCED PHASE-TRANSFORMATION IN NI/SI, NB/SI, MO/SI AND TI/SI SYSTEMS

Abstract

Extracted data

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