A simple method is proposed to measure the hot-electron temperature, using an Au-GaAs Schottky barrier diode. The obtained temperature of electrons under the electric field of 500 V/cm and 1100 V/cm are 316 K and 336 K, respectively, while the samples are kept at room temperature.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1987F877800040&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicSCI(E)EI0ARTICLE155-562
GaAs is a wide band gap semiconductor (1.42 eV) with potential use as a room temperature radiation d...
We describe an experimental cell which enables the cooling of electrons in a solid s...
Abstract. The influence of temperature on current–voltage (I–V) characteristics of Au/n-GaAs Schottk...
Heating of electrons by electric fields smaller than that required for generation of domain oscillat...
We propose a new experimental technique of measuring the effective electron temperature in the chann...
© The Author(s) 2014. This article is published with open access at Springerlink.com Abstract We pre...
We measure the temperature of a 2D electron gas in GaAs from the thermopower of a one-dimensional ba...
I report the measurement of electron temperature in a lateral GaAs quantum dot, which was cooled usi...
The current-voltage characteristics of Au/low-doped n-GaAs Schottky diodes were determined at variou...
Current-voltage-temperature (I-V-T) measurements of different metal-semiconductor diodes are carried...
Hall effect sensors are used in many applications because they are based on an ideal magnetic field ...
We have systematically investigated the energy loss mechanisms for hot electrons injected into a thi...
The use is described of metal-semiconductor diodes (Schottky diodes) as temperature sensors from roo...
We extend our previous studies of the heating by DC electric fields of submicron-diameter free-stand...
We propose a new model for GaAs MESFFETs that we incorporated into a circuit simulator. The improvem...
GaAs is a wide band gap semiconductor (1.42 eV) with potential use as a room temperature radiation d...
We describe an experimental cell which enables the cooling of electrons in a solid s...
Abstract. The influence of temperature on current–voltage (I–V) characteristics of Au/n-GaAs Schottk...
Heating of electrons by electric fields smaller than that required for generation of domain oscillat...
We propose a new experimental technique of measuring the effective electron temperature in the chann...
© The Author(s) 2014. This article is published with open access at Springerlink.com Abstract We pre...
We measure the temperature of a 2D electron gas in GaAs from the thermopower of a one-dimensional ba...
I report the measurement of electron temperature in a lateral GaAs quantum dot, which was cooled usi...
The current-voltage characteristics of Au/low-doped n-GaAs Schottky diodes were determined at variou...
Current-voltage-temperature (I-V-T) measurements of different metal-semiconductor diodes are carried...
Hall effect sensors are used in many applications because they are based on an ideal magnetic field ...
We have systematically investigated the energy loss mechanisms for hot electrons injected into a thi...
The use is described of metal-semiconductor diodes (Schottky diodes) as temperature sensors from roo...
We extend our previous studies of the heating by DC electric fields of submicron-diameter free-stand...
We propose a new model for GaAs MESFFETs that we incorporated into a circuit simulator. The improvem...
GaAs is a wide band gap semiconductor (1.42 eV) with potential use as a room temperature radiation d...
We describe an experimental cell which enables the cooling of electrons in a solid s...
Abstract. The influence of temperature on current–voltage (I–V) characteristics of Au/n-GaAs Schottk...