ION-BEAM MIXING TO PRODUCE DISORDERED ALSI SUPERCONDUCTING ALLOYS
- XI, XX
- RAN, QZ
- LIU, JR
- GUAN, WY
Publication date
January 1987
DOI Publisher
固体通讯 ISSN
0038-1098 Journal
issn:0038-1098 Citation count (estimate)
3Abstract
Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature T//c was measured in situ. The highest T//c thus obtained was 7. 53 K. Studies on samples with different compositions suggest that ion induced disorder might be the main reason for T//c enhancement in these AlSi alloys.Physics, Condensed MatterSCI(E)EI0ARTICLE12791-7936
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