Dopant effects on defects in GaN films grown by metal-organic chemical vapour deposition

The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet, etching of pits, x-ray diffraction and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the, etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample. The effects of the dopants on the, etching pits were discussed.Physics, MultidisciplinarySCI(E)中国科学引文数据库(CSCD)0ARTICLE91552-15532