Organic light-emitting diodes with n-type silicon anode
- Ran, GZ
- Xu, YH
- Ma, GL
- Xu, AG
- Qiao, YP
- Chen, WX
- Qin, GG
DOIAbstract
In an AIQ-based bilayer organic light-emitting diode, n-type silicon has been used as an anode, and semitransparent metals Sm (15 nm)/Au (15 nm) as a cathode. This device has much smaller currents at high voltages (> 8 V) and a higher turn-on voltage than the device with an identical structure but an indium-tin oxide anode. By successively depositing ultra thin films of Au and AIQ on the n-Si surface, the device performances are improved significantly, reaching a power efficiency of 0.1 Im W-1 and a current efficiency of 0.7 cd A(-1) at 15.9 V and 0.3 mA mm(-2). The mechanisms for the hole injection and performance improvement are discussed.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=Links...
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