Add to ORKGMeV ion implantation can form a waveguide in LiNbO3 crystal because of the damage induced by collisions. Damage in LiNbO3 induced by 0.7-MeV similar to 2.6-MeV Ti ions at doses of 10(13) cm(-2) and 10(15) cm(-2) are studied by RBS-C (Channeling Rutherford Backscattering Spectroscopy) analysis and numerical simulation with SRIM (Stopping and Range of Ions in Matter) code. The influence of annealing damage distribution is discussed. The discussion also concerns the topic of the relation between damage distribution and formation of wave-guide.Physics, MultidisciplinarySCI(E)CPCI-S(ISTP)
The damage formation by implantation of energetic (about 5 MeV) low Z ions (C, N, O, F) in LiNbO3 ha...
The monomode enhanced-index LiNbO3 waveguide fabricated by low-dose ion implantation is reported. Li...
3.0 MeV Ni2+ in the beam doses from 1x10(13) to 9x10(14) ions/cm(2) are implanted into LiNbO3 single...
6.0 MeV F3+ ions are implanted into x-cut LiNbO3 crystals in doses ranging from 3.0 x 10(13) to 1.0 ...
X-cut LiNbO3 crystals have been implanted by 0.8, 1.0 and 1.2 MeV F+ tilted at angles of 15-degrees,...
MeV Au+ ions were implanted into LiNbO3 with different fluences ranging from 4 x 10(13) to 5 x 10(14...
The optical waveguide was formed on an LiNbO3 substrate by 2.6 MeV nickel ions implantation to the d...
Single crystals of z-cut LiNbO3 were implanted at room temperature using 3.0 MeV oxygen ions at a fl...
Four different techniques (RBS/channeling, NRA/channeling, prism coupling, and TRIM) for estimating ...
The X-cut, Y-propagation LiNbO3 crystals were implanted by 2.8 MeV P+ ions with doses of similar to1...
X-cut LiNbO3 crystals were implanted at room temperature by 5.0 MeV O3+ ions with doses ranging from...
The damage induced by 5 MeV oxygen ion implantation in x-cut congruent LiNbO3 has been investigated ...
A barrier planar waveguide was fabricated in z-cut LiNbdO(3) crystals by 4.5-MeV lithium ion implant...
The damage effects produced in the near-surface region of x-cut LiNbO3 by low dose, high energy impl...
Optically polished LiNbO3 was implanted by 3.0 MeV B3+ ions at room temperature, forming planar opti...
The damage formation by implantation of energetic (about 5 MeV) low Z ions (C, N, O, F) in LiNbO3 ha...
The monomode enhanced-index LiNbO3 waveguide fabricated by low-dose ion implantation is reported. Li...
3.0 MeV Ni2+ in the beam doses from 1x10(13) to 9x10(14) ions/cm(2) are implanted into LiNbO3 single...
6.0 MeV F3+ ions are implanted into x-cut LiNbO3 crystals in doses ranging from 3.0 x 10(13) to 1.0 ...
X-cut LiNbO3 crystals have been implanted by 0.8, 1.0 and 1.2 MeV F+ tilted at angles of 15-degrees,...
MeV Au+ ions were implanted into LiNbO3 with different fluences ranging from 4 x 10(13) to 5 x 10(14...
The optical waveguide was formed on an LiNbO3 substrate by 2.6 MeV nickel ions implantation to the d...
Single crystals of z-cut LiNbO3 were implanted at room temperature using 3.0 MeV oxygen ions at a fl...
Four different techniques (RBS/channeling, NRA/channeling, prism coupling, and TRIM) for estimating ...
The X-cut, Y-propagation LiNbO3 crystals were implanted by 2.8 MeV P+ ions with doses of similar to1...
X-cut LiNbO3 crystals were implanted at room temperature by 5.0 MeV O3+ ions with doses ranging from...
The damage induced by 5 MeV oxygen ion implantation in x-cut congruent LiNbO3 has been investigated ...
A barrier planar waveguide was fabricated in z-cut LiNbdO(3) crystals by 4.5-MeV lithium ion implant...
The damage effects produced in the near-surface region of x-cut LiNbO3 by low dose, high energy impl...
Optically polished LiNbO3 was implanted by 3.0 MeV B3+ ions at room temperature, forming planar opti...
The damage formation by implantation of energetic (about 5 MeV) low Z ions (C, N, O, F) in LiNbO3 ha...
The monomode enhanced-index LiNbO3 waveguide fabricated by low-dose ion implantation is reported. Li...
3.0 MeV Ni2+ in the beam doses from 1x10(13) to 9x10(14) ions/cm(2) are implanted into LiNbO3 single...