Structural, optical and magnetic properties of Ga1-xMnxN films grown by MOCVD

In this paper, we have investigated the structural, optical and magnetic properties of Ga1-xMnxN films grown by MOCVD. The valence band structure was analysed by the x-ray photoelectron spectroscopy (XPS) measurements. A different Fermi level shift behaviour was observed with increasing Mn composition in the GaN. This shift behaviour was attributed to the donor-like defects induced by the Mn doping in the heavily doped samples. The presence of these defects was further confirmed by the calthodoluminescence spectra. The additional peak around 2.0 eV in the heavily doped samples corresponds to the intra-d-shell transitions of Mn2+. This Mn2+ state was formed by trapping the electrons released from the donor-like defects, which is quite consistent with the XPS results. Finally, the magnetic properties were also discussed in combination with the above results.Physics, AppliedSCI(E)EI2ARTICLE24null4