Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels
- Li, Lei
- Liu, Justin P. C.
- Liu, Lei
- Li, Ding
- Wang, Lei
- Wan, Chenghao
- Chen, Weihua
- Yang, Zhijian
- Xie, Yahong
- Hu, Xiaodong
- Zhang, Guoyi
DOIAbstract
We demonstrated an innovative lateral epitaxy method to grow c-plane GaN film using serpentine masked structures, which simplified the entire fabrication process with only one single epitaxial growth step and could efficiently block the threading dislocations. The microstructural and optical properties of GaN indicated that the crystalline quality was effectively improved. Unlike the conventional epitaxial lateral overgrowth (ELOG) or the double ELOG method, the presented serpentine masked structure needs no regrowth process for obtaining low-defect-density GaN materials, and is promising for growing high-performance III-nitride-based devices including laser diodes (LDs), power transistors, and light-emitting diodes (LEDs). (c) 2012 The Jap...
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