In this paper we report experimental results concerning the optical properties of sputtered AlN films and GaAs coated with AlN films, and the effects of the AlN films on the optical output power-current characteristics of GaAs/GaAlAs DH light emitting diodes (LEDs). We present the results of experiments to determine the optical properties of sputtered AlN films on GaAs wafers. The refractive index is 1. 970, which is smaller than the refractive index of bulk AlN and almost the same as the refractive index of silicon nitride. The thickness of sputtered AlN films is increased with increasing sputtering time. The reflectivity of the surface of GaAs wafers coated with AlN films is measured at normal incidence monochromatic polarized light with ...
The main purpose of the present work is to study the variation of the optical properties of the AlNx...
Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure...
Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputteri...
International audienceA study of the surface topography and optical characteristics of thin AlN film...
In recent years, a lot of efforts have been made in growth of AlN films because of its promising pot...
International audienceLow-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm wer...
This paper studies the optical characteristics of aluminum nitride thin films deposited by reactive ...
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magn...
A set of AlN thin-films was prepared by reactive magnetron sputtering at room temperature. The purpo...
This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin f...
Face-to-face annealed sputter-deposited aluminum nitride (AlN) templates (FFA Sp-AlN) are a promisin...
To improve the performance of III-nitride compound semiconductor-based optoelectronic devices, highl...
We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magn...
We report the comprehensive spectroscopic results of AlN thin films deposited on the A-, R- and C-su...
This project is dedicated to study the optical properties of rare earth-doped aluminum nitride thin ...
The main purpose of the present work is to study the variation of the optical properties of the AlNx...
Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure...
Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputteri...
International audienceA study of the surface topography and optical characteristics of thin AlN film...
In recent years, a lot of efforts have been made in growth of AlN films because of its promising pot...
International audienceLow-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm wer...
This paper studies the optical characteristics of aluminum nitride thin films deposited by reactive ...
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magn...
A set of AlN thin-films was prepared by reactive magnetron sputtering at room temperature. The purpo...
This paper reports optical and nanomechanical properties of predominantly a-axis oriented AlN thin f...
Face-to-face annealed sputter-deposited aluminum nitride (AlN) templates (FFA Sp-AlN) are a promisin...
To improve the performance of III-nitride compound semiconductor-based optoelectronic devices, highl...
We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magn...
We report the comprehensive spectroscopic results of AlN thin films deposited on the A-, R- and C-su...
This project is dedicated to study the optical properties of rare earth-doped aluminum nitride thin ...
The main purpose of the present work is to study the variation of the optical properties of the AlNx...
Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure...
Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputteri...